DM4N65E-F Datasheet and Replacement
Type Designator: DM4N65E-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 53.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
DM4N65E-F substitution
DM4N65E-F Datasheet (PDF)
dm4n65e.pdf
N MOS /N-Channel Power MOSFET DM4N65E RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
Datasheet: FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , FKBB3002 , FKBB3004 , FKD3006 , DM4N65E , IRF3710 , DM5N65E , DM5N65E-F , DM7N65C , DM7N65C-F , DM8N65C , DM8N65C-F , DM10N65C , DM10N65C-F .
Keywords - DM4N65E-F MOSFET datasheet
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