DM4N65E-F PDF and Equivalents Search

 

DM4N65E-F Specs and Replacement

Type Designator: DM4N65E-F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 53.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F

DM4N65E-F substitution

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DM4N65E-F datasheet

 7.1. Size:4587K  desay
 dm4n65e.pdf pdf_icon

DM4N65E-F

N MOS /N-Channel Power MOSFET DM4N65E RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY ... See More ⇒

Detailed specifications: FS8205, FMD5N50E5, FKBA3004, FKBA3006, FKBB3002, FKBB3004, FKD3006, DM4N65E, IRF3710, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F, DM10N65C, DM10N65C-F

Keywords - DM4N65E-F MOSFET specs

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