DM10N65C-F Specs and Replacement
Type Designator: DM10N65C-F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
DM10N65C-F substitution
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DM10N65C-F datasheet
Detailed specifications: DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F, DM10N65C, IRFP250N, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V, EMB12N04V
Keywords - DM10N65C-F MOSFET specs
DM10N65C-F cross reference
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DM10N65C-F replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MT4435ACTR | MMBF0201NLT1G | SRC60R045FB | IRLR8113PBF | SPP80N06S2L-09 | 2N6802U | 2SK1337
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