DM10N65C-2 Specs and Replacement
Type Designator: DM10N65C-2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 126 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
DM10N65C-2 substitution
- MOSFET ⓘ Cross-Reference Search
DM10N65C-2 datasheet
Detailed specifications: DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C, DM8N65C-F, DM10N65C, DM10N65C-F, IRF630, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V, EMB12N04V, EMB12P03G
Keywords - DM10N65C-2 MOSFET specs
DM10N65C-2 cross reference
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DM10N65C-2 substitution
DM10N65C-2 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1507-01MR | 2SK1519 | CM8N06C
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