SSF6N80A Specs and Replacement
Type Designator: SSF6N80A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3PF
SSF6N80A substitution
- MOSFET ⓘ Cross-Reference Search
SSF6N80A datasheet
ssf6n80a.pdf
SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒
ssf6n80f.pdf
SSF6N80F Main Product Characteristics VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco... See More ⇒
ssf6n80g.pdf
SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov... See More ⇒
Detailed specifications: SSF22N50A , SSF25N40A , SSF45N20A , SSF4N80AS , SSF4N90AS , SSF5N80A , SSF5N90A , SSF6N70A , MMIS60R580P , SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A .
Keywords - SSF6N80A MOSFET specs
SSF6N80A cross reference
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