EMB03N03HR Specs and Replacement
Type Designator: EMB03N03HR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 381 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6
EMB03N03HR substitution
- MOSFET ⓘ Cross-Reference Search
EMB03N03HR datasheet
emb03n03hr.pdf
EMB03N03HR N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 3.0m ID 75A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒
emb03n03hr.pdf
EMB03N03HR N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 3.0m ID 75A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒
Detailed specifications: DM8N65C, DM8N65C-F, DM10N65C, DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, STP75NF75, EMB09N03V, EMB09P03V, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V
Keywords - EMB03N03HR MOSFET specs
EMB03N03HR cross reference
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EMB03N03HR replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1507-01MR | 2SK1519 | CM8N06C
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