EMB09P03V PDF and Equivalents Search

 

EMB09P03V Specs and Replacement

Type Designator: EMB09P03V

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: EDFN3X3

EMB09P03V substitution

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EMB09P03V datasheet

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Detailed specifications: DM10N65C, DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, IRF9540N, EMB12N04V, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G, EMB22A04G

Keywords - EMB09P03V MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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