EMB12N04V PDF and Equivalents Search

 

EMB12N04V Specs and Replacement

Type Designator: EMB12N04V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm

Package: EDFN3X3

EMB12N04V substitution

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EMB12N04V datasheet

 ..1. Size:192K  1
 emb12n04v.pdf pdf_icon

EMB12N04V

EMB12N04V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 40V RDSON (MAX.) 12.8m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 ..2. Size:192K  emc
 emb12n04v.pdf pdf_icon

EMB12N04V

EMB12N04V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 40V RDSON (MAX.) 12.8m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 9.1. Size:191K  1
 emb12p03v.pdf pdf_icon

EMB12N04V

EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 9.2. Size:191K  emc
 emb12p03v.pdf pdf_icon

EMB12N04V

EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

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Detailed specifications: DM10N65C-F, DM10N65C-2, DM12N65C, DM12N65C-F, DM12N65C-2, EMB03N03HR, EMB09N03V, EMB09P03V, IRF4905, EMB12P03G, EMB12P03V, EMB17A03G, EMB17C03G, EMB20N03V, EMB20P03G, EMB22A04G, EMBA5P06J

Keywords - EMB12N04V MOSFET specs

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