EMB20N03V MOSFET Datasheet: N-Ch, 30V, 12A. Full specification with pinout and replacement list

EMB20N03V Specs and Replacement

Type Designator: EMB20N03V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: EDFN3X3

EMB20N03V substitution

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EMB20N03V datasheet

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EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20... See More ⇒

..2. Size:204K emc
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9.1. Size:57K nxp
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PEMB20; PUMB20 PNP/PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 03 1 September 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP JEITA PEMB20 SOT666 - PEMD20 PEMH20 PUMB20 SOT363 SC-88 PUMD20 PUMH20 1.2 Features ... See More ⇒

9.2. Size:191K china
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EMB20P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒