All MOSFET. SSF70N10A Datasheet

 

SSF70N10A Datasheet and Replacement


   Type Designator: SSF70N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO3PF
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SSF70N10A Datasheet (PDF)

 ..1. Size:261K  1
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SSF70N10A

 9.1. Size:1088K  goodark
 ssf7008.pdf pdf_icon

SSF70N10A

SSF7008 68V N-Channel MOSFET Main Product Characteristics VDSS 68V RDS(on) 5.6m(typ.) ID 84A TO- 220 Marking and Pin S c he mati c Diag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

 9.2. Size:950K  cn super semi
 ssf70r450s.pdf pdf_icon

SSF70N10A

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 700V Super Junction Power MOSFET Gen- SSF70R450S Rev. 1.0 Dec. 2018 www.supersemi.com.cn SSF70R450S 700V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced

 9.3. Size:1011K  cn super semi
 ssf70r650s2 ssp70r650s2 sst70r650s2.pdf pdf_icon

SSF70N10A

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor700V Super Junction Power MOSFET Gen-SS*70R650S2Rev. 1.2May. 2022www.supersemi.com.cnSSF70R650S2/SSP70R650S2/SST70R650S2700V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

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History: FDMS9620S | WMM11N80M3 | IRFI7536G

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