AP4410M PDF and Equivalents Search

 

AP4410M Specs and Replacement

Type Designator: AP4410M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: SO8

AP4410M substitution

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AP4410M datasheet

 ..1. Size:89K  ape
 ap4410m.pdf pdf_icon

AP4410M

AP4410M Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒

 8.1. Size:57K  ape
 ap4410agm.pdf pdf_icon

AP4410M

AP4410AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d... See More ⇒

 8.2. Size:54K  ape
 ap4410agm-hf.pdf pdf_icon

AP4410M

AP4410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 13.5m D D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒

 8.3. Size:202K  ape
 ap4410gm.pdf pdf_icon

AP4410M

AP4410GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D D Fast Switching D RDS(ON) 13.5m D Simple Drive Requirement ID 10A G S S SO-8 S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒

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Detailed specifications: EMF02P02H, EMF03N02HR, EMF20A02G, EMF20B02V, EMF50N03JS, AP2307GN, AP2311GN, AP4034GYT-HF-3, CS150N03A8, AP4435GM, AP72T03GH-HF, AP9579GP, AP9963GP, AP9977GM-HF, AP9985GM-HF, AP9T18GH-HF, FBM75N68P

Keywords - AP4410M MOSFET specs

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