MTC3588BDFA6
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTC3588BDFA6
Marking Code: 588B
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 14
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.5
nC
trⓘ - Rise Time: 18.8
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package: DFN2X2-6L
MTC3588BDFA6
Datasheet (PDF)
..1. Size:501K cystek
mtc3588bdfa6.pdf 
Spec. No. : C102DFA6 Issued Date : 2015.12.03 CYStech Electronics Corp. Revised Date : 2018.05.03 Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3588BDFA6 14V -14VBVDSS 6A(VGS=4.5V) -4A(VGS=-4.5 V) ID 16.6m(VGS=4.5V) 43m(VGS=-4.5V) 23.7m(VGS=2.5V) 63.6m(VGS=-2.5V) RDSON(TYP.) 38.5m(VGS=1.8V) 86.5m(VGS=-1.8V) 66.3m(VGS=1.5V) 15
7.1. Size:498K cystek
mtc3588n6.pdf
Spec. No. : C102N6 Issued Date : 2015.08.13 CYStech Electronics Corp.Revised Date : 2017.03.30 Page No. : 1/12 N- And P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC3588N6 BVDSS 14V -14VID @ TA=25 C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6m(VGS=4.5V) 45.1m(VGS=-4.5V) RDSON(TYP.) 24.7m(VGS=2.5V) 65.6m(VGS=-2.5V) Features Simple drive requirement
8.1. Size:408K cystek
mtc3585g6.pdf
Spec. No. : C416G6 Issued Date : 2007.07.13 CYStech Electronics Corp.Revised Date :2013.11.13 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3585G6 BVDSS 20V -20VID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)82m(VGS=1.5V) 280m(VGS=-1.5V)Features Simple drive requirement
8.2. Size:403K cystek
mtc3585n6.pdf
Spec. No. : C416G6 Issued Date : 2007.07.12 CYStech Electronics Corp.Revised Date :2013.09.06 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC3585N6 BVDSS 20V -20VID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)82m(VGS=1.5V) 280m(VGS=-1.5V)Description The MTC3585N6 consist
8.3. Size:431K cystek
mtc3586dfa6.pdf
Spec. No. : C835DFA6 Issued Date : 2013.06.03 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3586DFA6 BVDSS 20V -20VID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)Description 82m(VGS=1.5V) 280m(VGS=-1.5V)The MTC3586DFA6 consis
8.4. Size:467K cystek
mtc3586bdfa6.pdf
Spec. No. : C835DFA6 Issued Date : 2015.11.02 CYStech Electronics Corp.Revised Date : 2018.05.03 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC3586BDFA6 BVDSS 20V -20VID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m(VGS=4.5V) 78m(VGS=-4.5V) RDSON(TYP.) 37m(VGS=2.5V) 115m(VGS=-2.5V)Description 82m(VGS=1.5V) 280m(VGS=-1.5V)The MTC3586BDFA6 cons
8.5. Size:512K cystek
mtc3587dl8.pdf
Spec. No. : C093L8 Issued Date : 2016.09.30 CYStech Electronics Corp. Revised Date : 2017.09.29 Page No. : 1/13 N- and P-Channel Enhancement Mode Power MOSFET MTC3587DL8 N-CH P-CHBVDSS 20V -20V 4.9A(VGS=4.5V) -3.9A(VGS=-4.5 V) ID @ TA=25C Features 32m(VGS=4.5V) 50m(VGS=-4.5V) Simple drive requirement RDSON(TYP.) 43m(VGS=2.5V) 62m(VGS=-2.5V) Low gat
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