MTC3588N6 PDF and Equivalents Search

 

MTC3588N6 Specs and Replacement

Type Designator: MTC3588N6

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 14 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT26

MTC3588N6 substitution

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MTC3588N6 datasheet

 ..1. Size:498K  cystek
 mtc3588n6.pdf pdf_icon

MTC3588N6

Spec. No. C102N6 Issued Date 2015.08.13 CYStech Electronics Corp. Revised Date 2017.03.30 Page No. 1/12 N- And P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTC3588N6 BVDSS 14V -14V ID @ TA=25 C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6m (VGS=4.5V) 45.1m (VGS=-4.5V) RDSON(TYP.) 24.7m (VGS=2.5V) 65.6m (VGS=-2.5V) Features Simple drive requirement ... See More ⇒

 7.1. Size:501K  cystek
 mtc3588bdfa6.pdf pdf_icon

MTC3588N6

Spec. No. C102DFA6 Issued Date 2015.12.03 CYStech Electronics Corp. Revised Date 2018.05.03 Page No. 1/13 N- And P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3588BDFA6 14V -14V BVDSS 6A(VGS=4.5V) -4A(VGS=-4.5 V) ID 16.6m (VGS=4.5V) 43m (VGS=-4.5V) 23.7m (VGS=2.5V) 63.6m (VGS=-2.5V) RDSON(TYP.) 38.5m (VGS=1.8V) 86.5m (VGS=-1.8V) 66.3m (VGS=1.5V) 15... See More ⇒

 8.1. Size:408K  cystek
 mtc3585g6.pdf pdf_icon

MTC3588N6

Spec. No. C416G6 Issued Date 2007.07.13 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3585G6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Features Simple drive requirement ... See More ⇒

 8.2. Size:403K  cystek
 mtc3585n6.pdf pdf_icon

MTC3588N6

Spec. No. C416G6 Issued Date 2007.07.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC3585N6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Description The MTC3585N6 consist... See More ⇒

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Detailed specifications: MTB095N10KRN3, MTB1D0N03RH8, MTB20N06KJ3, MTB280N15L3, MTB340N11N6, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, IRFZ24N, MTC6601N6, MTE030N15RQ8, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8

Keywords - MTC3588N6 MOSFET specs

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