MTP4435AQ8 PDF and Equivalents Search

 

MTP4435AQ8 Specs and Replacement

Type Designator: MTP4435AQ8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP-8

MTP4435AQ8 substitution

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MTP4435AQ8 datasheet

 ..1. Size:491K  cystek
mtp4435aq8.pdf pdf_icon

MTP4435AQ8

Spec. No. C107Q8 Issued Date 2015.08.14 CYStech Electronics Corp. Revised Date 2015.12.15 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP4435AQ8 ID@ VGS=-10V, TA=25 C -12.3A 12.3m (typ.) RDSON @VGS=-10V, ID=-8A 17.5m (typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed ... See More ⇒

 6.1. Size:1125K  jiejie micro
jmtp4435a.pdf pdf_icon

MTP4435AQ8

JMTP4435A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -10A Load Switch RDS(ON) ... See More ⇒

 7.1. Size:328K  cystek
mtp4435v8.pdf pdf_icon

MTP4435AQ8

Spec. No. C391V8 Issued Date 2012.09.28 CYStech Electronics Corp. Revised Date Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4435V8 ID -40A 10.3m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m (typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of ... See More ⇒

 9.1. Size:621K  cystek
mtp4403sq8.pdf pdf_icon

MTP4435AQ8

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

Detailed specifications: MTC3588N6, MTC6601N6, MTE030N15RQ8, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, IRF1405, C2M065W030, C2M065W060, C2M065W200, C2M090BG070, C2M090W035, C2M090W070, C2M120W040, C2M120W080

Keywords - MTP4435AQ8 MOSFET specs

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