All MOSFET. MTP4435AQ8 Datasheet

 

MTP4435AQ8 Datasheet and Replacement


   Type Designator: MTP4435AQ8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP-8
 

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MTP4435AQ8 Datasheet (PDF)

 ..1. Size:491K  cystek
 mtp4435aq8.pdf pdf_icon

MTP4435AQ8

Spec. No. : C107Q8 Issued Date : 2015.08.14 CYStech Electronics Corp. Revised Date : 2015.12.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4435AQ8 ID@ VGS=-10V, TA=25C -12.3A 12.3m(typ.) RDSON @VGS=-10V, ID=-8A 17.5m(typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed

 7.1. Size:328K  cystek
 mtp4435v8.pdf pdf_icon

MTP4435AQ8

Spec. No. : C391V8 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4435V8 ID -40A10.3m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m(typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

 9.1. Size:621K  cystek
 mtp4403sq8.pdf pdf_icon

MTP4435AQ8

Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTP4403SQ8 RDSON(MAX) 46m ID -6.1ADescription The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

 9.2. Size:287K  cystek
 mtp4411q8.pdf pdf_icon

MTP4435AQ8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

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History: KHB1D0N60G | PTY88N07 | IRFH5025 | SUP60N06-18 | SI3469DV | IRFPS3815PBF | IRFIZ34GPBF

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