C2M065W030 Specs and Replacement
Type Designator: C2M065W030
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 264 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-247
C2M065W030 substitution
- MOSFET ⓘ Cross-Reference Search
C2M065W030 datasheet
c2m065w030.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. C2M065W030 650V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒
c2m065w060.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. C2M065W060 650V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒
c2m065w200.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. C2M065W200 650V N-Channel Silicon Carbide Power MOSFET FEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS Compliant BENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation APPLICATIONS Switch Mode Power Suppl... See More ⇒
Detailed specifications: MTC6601N6, MTE030N15RQ8, MTE050N15BRH8, MTE050N15BRV8, MTE65N20H8, MTEF1P15AV8, MTNK6N3, MTP4435AQ8, 7N60, C2M065W060, C2M065W200, C2M090BG070, C2M090W035, C2M090W070, C2M120W040, C2M120W080, C2M120W280
Keywords - C2M065W030 MOSFET specs
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