C2M065W030 Datasheet and Replacement
Type Designator: C2M065W030
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-247
C2M065W030 substitution
C2M065W030 Datasheet (PDF)
c2m065w030.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.C2M065W030650V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
c2m065w060.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.C2M065W060650V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
c2m065w200.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.C2M065W200650V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
Datasheet: MTC6601N6 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , MTEF1P15AV8 , MTNK6N3 , MTP4435AQ8 , MMIS60R580P , C2M065W060 , C2M065W200 , C2M090BG070 , C2M090W035 , C2M090W070 , C2M120W040 , C2M120W080 , C2M120W280 .
History: R5007FNX
Keywords - C2M065W030 MOSFET datasheet
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History: R5007FNX



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