C2M065W060 MOSFET. Datasheet pdf. Equivalent
Type Designator: C2M065W060
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 142 nS
Cossⓘ - Output Capacitance: 147 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: TO-247
C2M065W060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C2M065W060 Datasheet (PDF)
c2m065w060.pdf
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c2m065w030.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.C2M065W030650V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Suppl
c2m065w200.pdf
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