C2M120W040 MOSFET. Datasheet pdf. Equivalent
Type Designator: C2M120W040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 174 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04(typ) Ohm
Package: TO-247
C2M120W040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C2M120W040 Datasheet (PDF)
c2m120w040.pdf
nvertC2M120W040Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
c2m120w080.pdf
nvertC2M120W080Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel MOSFETAPPLICATIONSFEATURES Switch Mode Power Supply (SMPS) Low On-Resistance Power Factor Correction (PFC) Low Capacitance Uninterruptible Power Supply (UPS) Avalanche Ruggedness EV Charging station & Motor Drives Halogen Free, RoHS Compliant Solar/ Wind Renewable Energy
c2m120w280.pdf
nvertC2M120W280Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
