C2M120W040 Datasheet and Replacement
Type Designator: C2M120W040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 338 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04(typ) Ohm
Package: TO-247
C2M120W040 substitution
C2M120W040 Datasheet (PDF)
c2m120w040.pdf

nvertC2M120W040Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
c2m120w080.pdf

nvertC2M120W080Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel MOSFETAPPLICATIONSFEATURES Switch Mode Power Supply (SMPS) Low On-Resistance Power Factor Correction (PFC) Low Capacitance Uninterruptible Power Supply (UPS) Avalanche Ruggedness EV Charging station & Motor Drives Halogen Free, RoHS Compliant Solar/ Wind Renewable Energy
c2m120w280.pdf

nvertC2M120W280Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp
Datasheet: MTNK6N3 , MTP4435AQ8 , C2M065W030 , C2M065W060 , C2M065W200 , C2M090BG070 , C2M090W035 , C2M090W070 , 8N60 , C2M120W080 , C2M120W280 , CS10N60P , CS1060K , CS10N65F , CS10N65P , CS10N65K , CS10N65FF .
History: JFAM20N65E | PSMN5R0-80BS | MSU7N60T | SL12N10 | SQ4005EY | SFF80N20NUB | HSP0016
Keywords - C2M120W040 MOSFET datasheet
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History: JFAM20N65E | PSMN5R0-80BS | MSU7N60T | SL12N10 | SQ4005EY | SFF80N20NUB | HSP0016



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