CS12N65P MOSFET. Datasheet pdf. Equivalent
Type Designator: CS12N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 162 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO-220
CS12N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS12N65P Datasheet (PDF)
cs12n65f cs12n65p.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65F,CS12N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65F TO-220F CS12N65FCS
jcs12n65t.pdf
N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf
N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf
N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs12n65f.pdf
N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
cs12n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n65 a8r.pdf
Silicon N-Channel Power MOSFET R CS12N65 A8R General Description VDSS 650 V CS12N65 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs12n65f a9h.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs12n65 a8h.pdf
Silicon N-Channel Power MOSFET R CS12N65 A8H VDSS 650 V General Description ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n65fa9h.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs12n65a8h.pdf
Silicon N-Channel Power MOSFET R CS12N65 A8H VDSS 650 V General Description ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n65ff.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65FF TO-220F CS12N65FFAbsolute
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
