SSF9N80A Datasheet and Replacement
Type Designator: SSF9N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO3PF
SSF9N80A substitution
SSF9N80A Datasheet (PDF)
ssf9n80a.pdf
Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssf9n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssf9n90zh.pdf
SSF9N90ZHMain Product Characteristics: VDSS 900V RDS(on) 1.2 (typ.) ID 9ATO-247Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Datasheet: SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , IRF740 , SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A .
Keywords - SSF9N80A MOSFET datasheet
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