CS18N20BF MOSFET. Datasheet pdf. Equivalent
Type Designator: CS18N20BF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 166 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-220F
CS18N20BF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS18N20BF Datasheet (PDF)
cs18n20bf cs18n20bp cs18n20bb.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N20BF,CS18N20BP,CS18N20BB200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N20BF TO-220F
cs18n20bf cs18n20bp.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N20BF,CS18N20BP200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N20BF TO-220F CS18N20BF
jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf
N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS
jcs18n50wh.pdf
N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf
N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
cs18n70f cs18n70v.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N70F, CS18N70V700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N70F TO-220F CS18N70FC
cs18n50f cs18n50p cs18n50v cs18n50w.pdf
CS18N50F,CS18N50P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N50V,CS18N50W500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F
cs18n50f cs18n50p cs18n50v.pdf
nvertCS18N50F,CS18N50P,CS18N50VSuzhou Convert Semiconductor Co ., Ltd.500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F TO-220F CS1
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
