SSF9N90A Datasheet and Replacement. Cross Reference Search

SSF9N90A Datasheet (PDF)

..1. Size:943K samsung
ssf9n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

7.1. Size:501K silikron
ssf9n90zh.pdf pdf_icon

SSF9N90ZHMain Product Characteristics: VDSS 900V RDS(on) 1.2 (typ.) ID 9ATO-247Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

9.1. Size:935K samsung
ssf9n80a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , IRF840 , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 .