CS18N50V MOSFET. Datasheet pdf. Equivalent

   Type Designator: CS18N50V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53.4 nC
   trⓘ - Rise Time: 36.5 nS
   Cossⓘ - Output Capacitance: 228 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO-3P

CS18N50V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS