CS1N70SU MOSFET Datasheet: N-Ch, 700V, 1A. Full specification with pinout and replacement list

CS1N70SU Specs and Replacement

Type Designator: CS1N70SU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm

Package: TO-251

CS1N70SU substitution

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CS1N70SU datasheet

..1. Size:397K convert
cs1n70su cs1n70sf.pdf pdf_icon

nvert CS1N70SU, CS1N70SF Suzhou Convert Semiconductor Co ., Ltd. 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS1N70SU TO-251 CS1N70SU CS... See More ⇒

8.1. Size:496K jilin sino
jcs1n70tc.pdf pdf_icon

N R N-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10V Qg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction ... See More ⇒

8.2. Size:445K crhj
cs1n70 a3h-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

8.3. Size:443K wuxi china
cs1n70a3h-g.pdf pdf_icon