All MOSFET. CS1N70SF Datasheet

 

CS1N70SF MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS1N70SF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.7 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO-220F

 CS1N70SF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS1N70SF Datasheet (PDF)

 ..1. Size:397K  convert
 cs1n70su cs1n70sf.pdf

CS1N70SF CS1N70SF

nvertCS1N70SU, CS1N70SFSuzhou Convert Semiconductor Co ., Ltd.700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS1N70SU TO-251 CS1N70SUCS

 8.1. Size:496K  jilin sino
 jcs1n70tc.pdf

CS1N70SF CS1N70SF

N RN-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10VQg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction

 8.2. Size:445K  crhj
 cs1n70 a3h-g.pdf

CS1N70SF CS1N70SF

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.3. Size:443K  wuxi china
 cs1n70a3h-g.pdf

CS1N70SF CS1N70SF

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PSMN4R1-30YLC

 

 
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