Справочник MOSFET. CS1N70SF

 

CS1N70SF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS1N70SF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 17 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 11 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

CS1N70SF Datasheet (PDF)

 ..1. Size:397K  convert
cs1n70su cs1n70sf.pdfpdf_icon

CS1N70SF

nvertCS1N70SU, CS1N70SFSuzhou Convert Semiconductor Co ., Ltd.700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS1N70SU TO-251 CS1N70SUCS

 8.1. Size:496K  jilin sino
jcs1n70tc.pdfpdf_icon

CS1N70SF

N RN-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10VQg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction

 8.2. Size:445K  crhj
cs1n70 a3h-g.pdfpdf_icon

CS1N70SF

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.3. Size:443K  wuxi china
cs1n70a3h-g.pdfpdf_icon

CS1N70SF

Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGN035N08AL | WM02N08L | CP650 | MMP4407

 

 
Back to Top

 


 
.