CS2N50DF MOSFET Datasheet: N-Ch, 500V, 2A. Full specification with pinout and replacement list

CS2N50DF Specs and Replacement

Type Designator: CS2N50DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-220F

CS2N50DF substitution

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CS2N50DF datasheet

..1. Size:452K convert
cs2n50df cs2n50dp cs2n50dd cs2n50du.pdf pdf_icon

CS2N50DF, CS2N50DP, nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N50DD,CS2N50DU 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N50D... See More ⇒

8.1. Size:357K wuxi china
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Silicon N-Channel Power MOSFET R CS2N50 A4 General Description VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

Detailed specifications: CS20N65P, CS20N65V, CS20N65W, CS2N100F, CS2N100P, CS2N100U, CS2N100D, CS2N100LF, IRF530, CS2N50DP, CS2N50DD, CS2N50DU, CS2N60P, CS2N60U, CS2N60C, CS2N65F, CS2N65D