CS2N50DD Specs and Replacement
Type Designator: CS2N50DD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO-252
CS2N50DD substitution
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CS2N50DD datasheet
cs2n50df cs2n50dp cs2n50dd cs2n50du.pdf
CS2N50DF, CS2N50DP, nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N50DD,CS2N50DU 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N50D... See More ⇒
cs2n50a4.pdf
Silicon N-Channel Power MOSFET R CS2N50 A4 General Description VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
Detailed specifications: CS20N65W, CS2N100F, CS2N100P, CS2N100U, CS2N100D, CS2N100LF, CS2N50DF, CS2N50DP, NCEP15T14, CS2N50DU, CS2N60P, CS2N60U, CS2N60C, CS2N65F, CS2N65D, CS2N65U, CS2N70HF
Keywords - CS2N50DD MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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