All MOSFET. CS30N10P Datasheet

 

CS30N10P MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS30N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 110 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 30 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 53 nC
   Rise Time (tr): 45 nS
   Drain-Source Capacitance (Cd): 276 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
   Package: TO-220

 CS30N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS30N10P Datasheet (PDF)

 ..1. Size:798K  convert
 cs30n10p cs30n10u cs30n10d.pdf

CS30N10P CS30N10P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS30N10P,CS30N10UCS30N10D100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS30N10P TO-220 CS

 9.1. Size:59K  china
 cs30nf06l.pdf

CS30N10P

CS30NF06LN PD TC=25 70 W 0.46 W/VGS=10V,TC=25 35ID A VGS=10V,TC=100 25IDM 140 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 2.14 /WRthJA 100 /W BVDSS VGS=0V,ID=0.25mA 60 VVGS=5V,ID=18A 0.025 0.07RD

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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