CS30N10P MOSFET Datasheet: N-Ch, 100V, 30A. Full specification with pinout and replacement list

CS30N10P Specs and Replacement

Type Designator: CS30N10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 276 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-220

CS30N10P substitution

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CS30N10P datasheet

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nvert Suzhou Convert Semiconductor Co ., Ltd. CS30N10P,CS30N10U CS30N10D 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS30N10P TO-220 CS... See More ⇒

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Silicon N-Channel Power MOSFET R CS30N20F A9R General Description VDSS 200 V CS30N20F A9R, the silicon N-channel Enhanced ID 30 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 70 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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