All MOSFET. CS30N10P Datasheet

 

CS30N10P Datasheet and Replacement


   Type Designator: CS30N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-220
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CS30N10P Datasheet (PDF)

 ..1. Size:798K  convert
 cs30n10p cs30n10u cs30n10d.pdf pdf_icon

CS30N10P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS30N10P,CS30N10UCS30N10D100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS30N10P TO-220 CS

 7.1. Size:860K  blue-rocket-elect
 brcs30n10dp.pdf pdf_icon

CS30N10P

BRCS30N10DP Rev.A Sep.-2018 DATA SHEET / Descriptions NTO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on) Crss Low RDS(on) ,low gate charge, low C rss , fast switching. / Applications DC/DC

 9.1. Size:877K  blue-rocket-elect
 brcs30n02ip.pdf pdf_icon

CS30N10P

BRCS30N02IP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-251 N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 9.2. Size:837K  blue-rocket-elect
 brcs30n02dp.pdf pdf_icon

CS30N10P

BRCS30N02DP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

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