SSH15N55 PDF and Equivalents Search

 

SSH15N55 Specs and Replacement

Type Designator: SSH15N55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 738 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3P

SSH15N55 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH15N55 datasheet

 ..1. Size:394K  samsung
 ssh15n60 ssh15n55.pdf pdf_icon

SSH15N55

SSH15N55 PCB 24 ... See More ⇒

Detailed specifications: SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , IRFZ44 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A .

History: U309 | SMK0270F | FDU6N25

Keywords - SSH15N55 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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