CS4N150V Datasheet and Replacement
Type Designator: CS4N150V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO-3P
CS4N150V substitution
CS4N150V Datasheet (PDF)
cs4n150v cs4n150w cs4n150vf.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd. CS4N150V,CS4N150W,CS4N150VF1500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N150V TO-3P CS4N
brcs4n10ta.pdf

BRCS4N10TA Rev.A Jun.-2021 DATA SHEET / Descriptions SOT-89 N MOS N- CHANNEL MOSFET in a SOT-89 Plastic Package. / Features VDS (V) = 100V ID = 4A (VGS = 10V) RDS(ON)
bcs4n10.pdf

BCS4N10 PD TC=25 14 W ID TC=25 4 A VGS 20 V Tjm +150 Tstg -55 +155 BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3.8A 0.55 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=15V,IDS=3.8A(N)IDS=4.1A(P) 1.2 S IDSS VDS=
cs4n100f cs4n100v cs4n100vf.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N100F,CS4N100V,CS4N100VF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N100F TO-220F C
Datasheet: CS3N90F , CS3N90P , CS3N90B , CS40N20F , CS40N20P , CS4N100F , CS4N100V , CS4N100VF , IRF540N , CS4N150W , CS4N150VF , CS4N60P , CS4N60U , CS4N65P , CS4N65U , CS4N65D , CS4N70F .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - CS4N150V MOSFET datasheet
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CS4N150V lookup
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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