CS4N90P MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N90P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 71 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO-220
CS4N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N90P Datasheet (PDF)
cs4n90f cs4n90p.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N90F, CS4N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N90F TO-220F CS4N90FCS4N9
jcs4n90va jcs4n90ra jcs4n90sa jcs4n90fa jcs4n90ca.pdf
N RN-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS Package ID 4.0 A VDSS 900 V RdsonVgs=10V 3.3 -MAX Qg-Typ 14.7nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli
jcs4n90fh jcs4n90rh jcs4n90vh.pdf
N RN-CHANNEL MOSFET CSJ 4N90H Package MAIN CHARACTERISTICS ID 4 4 4A VDSS 900 V Rdson_max 5.5 Vgs=10V Qg-typ 7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
