SSH17N60A PDF and Equivalents Search

 

SSH17N60A Specs and Replacement

Type Designator: SSH17N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO3P

SSH17N60A substitution

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SSH17N60A datasheet

 ..1. Size:944K  samsung
 ssh17n60a.pdf pdf_icon

SSH17N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.356 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

Detailed specifications: SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , IRFB4110 , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 , SSH25N35A , SSH25N40 .

History: SVD4N65T | 4542

Keywords - SSH17N60A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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