All MOSFET. SSH17N60A Datasheet

 

SSH17N60A Datasheet and Replacement


   Type Designator: SSH17N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO3P
 

 SSH17N60A substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSH17N60A Datasheet (PDF)

 ..1. Size:944K  samsung
 ssh17n60a.pdf pdf_icon

SSH17N60A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Datasheet: SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , IRF640N , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 , SSH25N35A , SSH25N40 .

Keywords - SSH17N60A MOSFET datasheet

 SSH17N60A cross reference
 SSH17N60A equivalent finder
 SSH17N60A lookup
 SSH17N60A substitution
 SSH17N60A replacement

 

 
Back to Top

 


 
.