SSH20N45 PDF and Equivalents Search

 

SSH20N45 Specs and Replacement

Type Designator: SSH20N45

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 438 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3P

SSH20N45 substitution

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SSH20N45 datasheet

 ..1. Size:171K  samsung
 ssh20n45 ssh20n50.pdf pdf_icon

SSH20N45

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Detailed specifications: SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , IRF640N , SSH20N45A , SSH20N50 , SSH20N50A , SSH22N50A , SSH25N35 , SSH25N35A , SSH25N40 , SSH25N40A .

History: GSM2301A | STRH40N6

Keywords - SSH20N45 MOSFET specs

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