SSH20N50 Specs and Replacement
Type Designator: SSH20N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 438 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3P
SSH20N50 substitution
- MOSFET ⓘ Cross-Reference Search
SSH20N50 datasheet
Detailed specifications: SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , AO3400 , SSH20N50A , SSH22N50A , SSH25N35 , SSH25N35A , SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A .
Keywords - SSH20N50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SVD4N65T | SSH10N90A
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