All MOSFET. CS7N70F Datasheet

 

CS7N70F MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS7N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

 CS7N70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N70F Datasheet (PDF)

 ..1. Size:429K  convert
 cs7n70f cs7n70u.pdf

CS7N70F CS7N70F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N70F,CS7N70U700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N70F TO-220F CS7N70FCS7N70

 0.1. Size:1944K  jilin sino
 jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf

CS7N70F CS7N70F

N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 0.2. Size:1228K  jilin sino
 jcs7n70fe.pdf

CS7N70F CS7N70F

N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

 8.1. Size:347K  crhj
 cs7n70 ard.pdf

CS7N70F CS7N70F

Silicon N-Channel Power MOSFET R CS7N70 ARD General Description VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:347K  wuxi china
 cs7n70ard.pdf

CS7N70F CS7N70F

Silicon N-Channel Power MOSFET R CS7N70 ARD General Description VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:397K  wuxi china
 cs7n70a4r-g.pdf

CS7N70F CS7N70F

Silicon N-Channel Power MOSFET R CS7N70 A4R-G General Description VDSS 700 V CS7N70 A4R-G, the silicon N-channel Enhanced ID 7 A PD(TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.96 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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