All MOSFET. CS8N120V Datasheet

 

CS8N120V MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS8N120V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-3P

 CS8N120V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N120V Datasheet (PDF)

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 cs8n120v cs8n120w.pdf

CS8N120V CS8N120V

nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N120V,CS8N120W1200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N120V TO-3P CS8N120VCS8N

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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