All MOSFET. CS8N70F Datasheet

 

CS8N70F Datasheet and Replacement


   Type Designator: CS8N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220F
 

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CS8N70F Datasheet (PDF)

 ..1. Size:242K  crhj
 cs8n70f a9h2-g.pdf pdf_icon

CS8N70F

Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..2. Size:681K  convert
 cs8n70f.pdf pdf_icon

CS8N70F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N70F TO-220F CS8N70FAbsolute Maxim

Datasheet: CS8N120W , CS8N60P , CS8N60U , CS8N60D , CS8N65F-B , CS8N65F , CS8N65P , CS8N65D , STP65NF06 , CS8N90F , CS8N90P , CS9N65F , CS9N65D , CS9N80F , CS9N80P , CS9N90F , CS9N90P .

History: PSMN4R0-30YL | CS6N70F | HGA040N06SL | IPSA70R900P7S | BRCS080N04ZC | SPMT9200F | IPT026N10N5

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