CS8N70F Specs and Replacement
Type Designator: CS8N70F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 113 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-220F
CS8N70F substitution
- MOSFET ⓘ Cross-Reference Search
CS8N70F datasheet
cs8n70f a9h2-g.pdf
Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒
cs8n70f.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N70F 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N70F TO-220F CS8N70F Absolute Maxim... See More ⇒
Detailed specifications: CS8N120W, CS8N60P, CS8N60U, CS8N60D, CS8N65F-B, CS8N65F, CS8N65P, CS8N65D, MMIS60R580P, CS8N90F, CS8N90P, CS9N65F, CS9N65D, CS9N80F, CS9N80P, CS9N90F, CS9N90P
Keywords - CS8N70F MOSFET specs
CS8N70F cross reference
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