CS8N70F MOSFET. Datasheet pdf. Equivalent
Type Designator: CS8N70F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 113 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-220F
CS8N70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS8N70F Datasheet (PDF)
cs8n70f a9h2-g.pdf
Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs8n70f.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N70F TO-220F CS8N70FAbsolute Maxim
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