All MOSFET. CS8N90F Datasheet

 

CS8N90F MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS8N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220F

 CS8N90F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N90F Datasheet (PDF)

 ..1. Size:770K  crhj
 cs8n90f a9hd.pdf

CS8N90F CS8N90F

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..2. Size:652K  crhj
 cs8n90f a9.pdf

CS8N90F CS8N90F

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 ..3. Size:666K  convert
 cs8n90f cs8n90p.pdf

CS8N90F CS8N90F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N90F, CS8N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N90F TO-220F CS8N90FCS8N9

 0.1. Size:770K  wuxi china
 cs8n90fa9hd.pdf

CS8N90F CS8N90F

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.1. Size:647K  crhj
 cs8n90 a8.pdf

CS8N90F CS8N90F

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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