All MOSFET. CS9N65D Datasheet

 

CS9N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS9N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-252

 CS9N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS9N65D Datasheet (PDF)

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 cs9n65f cs9n65d.pdf

CS9N65D CS9N65D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N65F, CS9N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N65F TO-220F CS9N65FCS9N6

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