CS9N65D Specs and Replacement

Type Designator: CS9N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-252

CS9N65D substitution

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CS9N65D datasheet

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 cs9n65f cs9n65d.pdf pdf_icon

CS9N65D

nvert Suzhou Convert Semiconductor Co ., Ltd. CS9N65F, CS9N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS9N65F TO-220F CS9N65F CS9N6... See More ⇒

Detailed specifications: CS8N65F-B, CS8N65F, CS8N65P, CS8N65D, CS8N70F, CS8N90F, CS8N90P, CS9N65F, IRFP064N, CS9N80F, CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V, CS9N95F, CS9N95W

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