CSFR3N60LD MOSFET. Datasheet pdf. Equivalent
Type Designator: CSFR3N60LD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 36 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO-252
CSFR3N60LD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSFR3N60LD Datasheet (PDF)
csfr3n60lf csfr3n60lp csfr3n60lu csfr3n60ld.pdf
CSFR3N60LF,CSFR3N60LPnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR3N60LU,CSFR3N60LD600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Packag
csfr3n60f csfr3n60p csfr3n60u csfr3n60d.pdf
CSFR3N60F,CSFR3N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR3N60U,CSFR3N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package In
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