CSFR4N60P Specs and Replacement

Type Designator: CSFR4N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-220

CSFR4N60P substitution

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CSFR4N60P datasheet

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 csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf pdf_icon

CSFR4N60P

CSFR4N60F,CSFR4N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR4N60U,CSFR4N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ma... See More ⇒

Detailed specifications: CSFR3N60P, CSFR3N60U, CSFR3N60D, CSFR3N60LF, CSFR3N60LP, CSFR3N60LU, CSFR3N60LD, CSFR4N60F, 8205A, CSFR4N60U, CSFR4N60D, CSFR6N60F, CSFR6N60K, CSFR6N60U, CSFR6N60D, CSFR6N70F, CSFR6N70K

Keywords - CSFR4N60P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.