CSFR4N60U Specs and Replacement
Type Designator: CSFR4N60U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-251
CSFR4N60U substitution
- MOSFET ⓘ Cross-Reference Search
CSFR4N60U datasheet
csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf
CSFR4N60F,CSFR4N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR4N60U,CSFR4N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ma... See More ⇒
Detailed specifications: CSFR3N60U, CSFR3N60D, CSFR3N60LF, CSFR3N60LP, CSFR3N60LU, CSFR3N60LD, CSFR4N60F, CSFR4N60P, 7N65, CSFR4N60D, CSFR6N60F, CSFR6N60K, CSFR6N60U, CSFR6N60D, CSFR6N70F, CSFR6N70K, CSFR6N70U
Keywords - CSFR4N60U MOSFET specs
CSFR4N60U cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SVF1N60AB | IPD042P03L3G
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