CSFR4N60D MOSFET. Datasheet pdf. Equivalent
Type Designator: CSFR4N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-252
CSFR4N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSFR4N60D Datasheet (PDF)
..1. Size:702K convert
csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf
csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf
CSFR4N60F,CSFR4N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR4N60U,CSFR4N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Ma
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