CSFR7N60K MOSFET. Datasheet pdf. Equivalent
Type Designator: CSFR7N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 92 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-262
CSFR7N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSFR7N60K Datasheet (PDF)
csfr7n60f csfr7n60k csfr7n60d csfr7n60u.pdf
CSFR7N60F, CSFR7N60K, nvertSuzhou Convert Semiconductor Co ., Ltd.CSFR7N60D,CSFR7N60U600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BUK7M9R9-60E | IXFH88N20Q | IXFN26N90 | DL2M100N5 | 2SJ539 | ZVN3306ASTZ | IRFU3709Z
History: BUK7M9R9-60E | IXFH88N20Q | IXFN26N90 | DL2M100N5 | 2SJ539 | ZVN3306ASTZ | IRFU3709Z
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918