All MOSFET. CSN04N1P5 Datasheet

 

CSN04N1P5 Datasheet and Replacement


   Type Designator: CSN04N1P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: DFN5X6
 

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CSN04N1P5 Datasheet (PDF)

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CSN04N1P5

CSN04N1P540V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingCS

Datasheet: CSFR6N70U , CSFR6N70D , CSFR7N60F , CSFR7N60K , CSFR7N60D , CSFR7N60U , CSN03N2P2 , CSN03N3P9 , SKD502T , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F .

History: SJMN099R60ZSW | CSN03N3P9

Keywords - CSN04N1P5 MOSFET datasheet

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