CSN04N1P5 Specs and Replacement
Type Designator: CSN04N1P5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: DFN5X6
CSN04N1P5 substitution
- MOSFET ⓘ Cross-Reference Search
CSN04N1P5 datasheet
csn04n1p5.pdf
CSN04N1P5 40V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking CS... See More ⇒
Detailed specifications: CSFR6N70U, CSFR6N70D, CSFR7N60F, CSFR7N60K, CSFR7N60D, CSFR7N60U, CSN03N2P2, CSN03N3P9, SKD502T, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D, CST08N50F
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