All MOSFET. CSP10N4P2 Datasheet

 

CSP10N4P2 Datasheet and Replacement


   Type Designator: CSP10N4P2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 284 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 1656 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220
 

 CSP10N4P2 substitution

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CSP10N4P2 Datasheet (PDF)

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CSP10N4P2

CSP10N4P2100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

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CSP10N4P2

CSP10N8P3100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

Datasheet: CSFR7N60D , CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , 4N60 , CSP10N8P3 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF , CST30N10F .

History: SIA517 | LSG65R650HT | AP4024EH | APT34N80LC3G | AM90P04-03P | NTMFS5834NL | QM2404D

Keywords - CSP10N4P2 MOSFET datasheet

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