CST08N50F Specs and Replacement
Type Designator: CST08N50F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.9 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO-220F
CST08N50F substitution
- MOSFET ⓘ Cross-Reference Search
CST08N50F datasheet
cst08n50u cst08n50d cst08n50f.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CST08N50U, CST08N50D,CST08N50F 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CST08N50U TO-251... See More ⇒
Detailed specifications: CSN04N1P5, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D, AON6380, CST1N50DLU, CST1N50DLD, CST1N50DLF, CST30N10F, CST30N10U, CST30N10D, CST30N10P, CST9N20LF
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