CST1N50DLD Specs and Replacement

Type Designator: CST1N50DLD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO-252

CST1N50DLD substitution

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CST1N50DLD datasheet

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CST1N50DLD

nvert CST1N50DLU, CST1N50DLD, CST1N50DLF Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CST1N50DLU T... See More ⇒

Detailed specifications: CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D, CST08N50F, CST1N50DLU, CS150N03A8, CST1N50DLF, CST30N10F, CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.