All MOSFET. CST1N50DLF Datasheet

 

CST1N50DLF MOSFET. Datasheet pdf. Equivalent


   Type Designator: CST1N50DLF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
   Package: TO-220F

 CST1N50DLF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CST1N50DLF Datasheet (PDF)

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 cst1n50dlu cst1n50dld cst1n50dlf.pdf

CST1N50DLF CST1N50DLF

nvertCST1N50DLU, CST1N50DLD, CST1N50DLFSuzhou Convert Semiconductor Co ., Ltd.500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCST1N50DLU T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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