CST30N10F Specs and Replacement
Type Designator: CST30N10F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 608 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO-220F
CST30N10F substitution
- MOSFET ⓘ Cross-Reference Search
CST30N10F datasheet
cst30n10f cst30n10u cst30n10d cst30n10p.pdf
CST30N10F,CST30N10U, nvert Suzhou Convert Semiconductor Co ., Ltd. CST30N10D,CST30N10P 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Device Marking and Package Information Device Package Marking CST30N10F TO-220F CST30N10F CST30N10D T... See More ⇒
Detailed specifications: CSP10N4P2, CSP10N8P3, CST08N50U, CST08N50D, CST08N50F, CST1N50DLU, CST1N50DLD, CST1N50DLF, AON7506, CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, CTD02N004
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