CST30N10P Specs and Replacement

Type Designator: CST30N10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 608 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-220

CST30N10P substitution

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CST30N10P datasheet

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CST30N10P

CST30N10F,CST30N10U, nvert Suzhou Convert Semiconductor Co ., Ltd. CST30N10D,CST30N10P 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Device Marking and Package Information Device Package Marking CST30N10F TO-220F CST30N10F CST30N10D T... See More ⇒

Detailed specifications: CST08N50D, CST08N50F, CST1N50DLU, CST1N50DLD, CST1N50DLF, CST30N10F, CST30N10U, CST30N10D, TK10A60D, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, CTD02N004, CTD02N007, CTD02N4P8, CTD03N003

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.