All MOSFET. CST30N10P Datasheet

 

CST30N10P Datasheet and Replacement


   Type Designator: CST30N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-220
 

 CST30N10P substitution

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CST30N10P Datasheet (PDF)

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CST30N10P

CST30N10F,CST30N10U,nvertSuzhou Convert Semiconductor Co ., Ltd.CST30N10D,CST30N10P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)Device Marking and Package InformationDevice Package MarkingCST30N10F TO-220F CST30N10FCST30N10D T

Datasheet: CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U , CST30N10D , IRFZ24N , CST9N20LF , CST9N20LP , CTB06N005 , CTP06N005 , CTD02N004 , CTD02N007 , CTD02N4P8 , CTD03N003 .

History: SI4622DY | VBZL80N03

Keywords - CST30N10P MOSFET datasheet

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