CST30N10P MOSFET. Datasheet pdf. Equivalent
Type Designator: CST30N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 608 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO-220
CST30N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CST30N10P Datasheet (PDF)
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cst30n10f cst30n10u cst30n10d cst30n10p.pdf
cst30n10f cst30n10u cst30n10d cst30n10p.pdf
CST30N10F,CST30N10U,nvertSuzhou Convert Semiconductor Co ., Ltd.CST30N10D,CST30N10P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)Device Marking and Package InformationDevice Package MarkingCST30N10F TO-220F CST30N10FCST30N10D T
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